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| SKU: | LGE3M45170B |
| MPN: | LGE3M45170B |
| Manufacturer: | LUGUANG ELECTRONIC |
| Amount | Price |
|---|---|
| 1+ | USD 67.50 |
| 3+ | USD 60.70 |
| 10+ | USD 53.70 |
| 30+ | USD 51.40 |
| 120+ | USD 48.20 |
| 450+ | USD 45.00 |
| 900+ | USD 43.40 |
| 1800+ | USD 43.20 |
USD
{"1":6750000,"3":6070000,"10":5370000,"30":5140000,"120":4820000,"450":4500000,"900":4340000,"1800":4320000}
| Manufacturer | LUGUANG ELECTRONIC |
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.7kV |
| Drain current | 48A |
| Pulsed drain current | 160A |
| Power dissipation | 520W |
| Case | TO247-3 |
| Gate-source voltage | -5...20V |
| On-state resistance | 90mΩ |
| Mounting | THT |
| Gate charge | 54nC |
| Kind of package | tube |
| Kind of channel | enhancement |
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